TOKYO, Sept 25 (Bernama-BUSINESS
WIRE) -- Toshiba
Electronic Devices & Storage Corporation (TDSC) today announced the
launch of “SSM3K357R,” a new MOSFET that adopts an active-clamp structure with
a built-in diode between the drain and gate terminals. The device is suited to
driving inductive loads, such as mechanical relays. Volume shipments start
today.
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