Tuesday, 19 December 2017

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION RELEASES 100V N-CHANNEL POWER MOSFETS FOR INDUSTRIAL APPLICATIONS WITH THE INDUSTRY'S LOWEST-IN-CLASS ON-RESISTANCE

Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

TOKYO, Dec 18 (Bernama-BUSINESS WIRE) -- Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].

http://mrem.bernama.com/viewsm.php?idm=30808

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